VISHAY · FETs & Power MOSFETs · MPN SUP50010E-GE3
No reviews yet — be the first to review VISHAY SUP50010E-GE3.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 212nC@10V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 2.5mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.895nF |
| Type | N-Channel |
60V 150A 4V 375W 2.5mΩ@7.5V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS