VISHAY · FETs & Power MOSFETs · MPN SUP10250E-GE3
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| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 32.5mΩ@7.5V |
| Number | 1 N-channel |
| Type | N-Channel |
250V 63A 4V 375W 32.5mΩ@7.5V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS