VISHAY SUM90100E-GE3

VISHAY · FETs & Power MOSFETs · MPN SUM90100E-GE3

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation245W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)12.9mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)3.93nF
TypeN-Channel

Technical details

N-Channel 200V 150A 245W Surface Mount TO-263(D2Pak)

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