VISHAY · FETs & Power MOSFETs · MPN SUM65N20-30-E3
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.1nF |
200V 65A 2V 3.75W 30mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS