VISHAY · FETs & Power MOSFETs · MPN SUM110N10-09-E3
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 110A |
| Output Capacitance(Coss) | 750pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| RDS(on) | 9.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.7nF |
| Type | N-Channel |
100V 110A 4V 375W 9.5mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS