VISHAY SUG80050E-GE3

VISHAY · FETs & Power MOSFETs · MPN SUG80050E-GE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)110nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)5.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.25nF

Technical details

N-Channel 150V 100A 167W Through Hole TO-247AC

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