VISHAY · FETs & Power MOSFETs · MPN SUG80050E-GE3
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 5.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.25nF |
N-Channel 150V 100A 167W Through Hole TO-247AC