VISHAY SUD70090E-GE3

VISHAY · FETs & Power MOSFETs · MPN SUD70090E-GE3

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)845pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)9.3mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.95nF
TypeN-Channel

Technical details

100V 50A 4V 125W 9.3mΩ@7.5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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