VISHAY SUD50P04-08-BE3

VISHAY · FETs & Power MOSFETs · MPN SUD50P04-08-BE3

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Specifications

Gate Charge(Qg)95nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation93.7W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)22mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.12nF
TypeP-Channel

Technical details

40V 60A 3V 93.7W 22mΩ@4.5V 1 P-Channel P-Channel TO-252AA Single FETs, MOSFETs RoHS

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