VISHAY SUD50N06-09L-E3

VISHAY · FETs & Power MOSFETs · MPN SUD50N06-09L-E3

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Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)9.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.65nF

Technical details

60V 50A 2V 9.3mΩ@10V 1 N-channel TO-252-2 Single FETs, MOSFETs RoHS

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