VISHAY · FETs & Power MOSFETs · MPN SUD50N04-8M8P-4BE3
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 14A;50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.1W;48.1W |
| RDS(on) | 8.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.4nF |
40V 3V 8.8mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS