VISHAY · FETs & Power MOSFETs · MPN SUD50N03-06AP-E3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 95nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | - |
| RDS(on) | 5.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.8nF |
30V 2.4V 5.7mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS