VISHAY SUD50N03-06AP-E3

VISHAY · FETs & Power MOSFETs · MPN SUD50N03-06AP-E3

No reviews yet — be the first to review VISHAY SUD50N03-06AP-E3.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)95nC@10V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation-
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.8nF

Technical details

30V 2.4V 5.7mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs