VISHAY · FETs & Power MOSFETs · MPN SUD35N10-26P-GE3
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 37.5mΩ@7V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
100V 35A 4.4V 83W 37.5mΩ@7V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS