VISHAY · FETs & Power MOSFETs · MPN SUD35N10-26P-BE3
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 12A;35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.4V |
| Pd - Power Dissipation | 8.3W;83W |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
100V 4.4V 26mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS