VISHAY · FETs & Power MOSFETs · MPN SUD20N10-66L-GE3
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| Gate Charge(Qg) | 19.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 18.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 41.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 66mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 860pF |
N-Channel 100V 18.2A 41.7W Surface Mount TO-252