VISHAY · FETs & Power MOSFETs · MPN SUD20N10-66L-BE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 16.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.1W;41.7W |
| RDS(on) | 66mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 860pF |
100V 16.9A 3V 66mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS