VISHAY SUD19P06-60-E3

VISHAY · FETs & Power MOSFETs · MPN SUD19P06-60-E3

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)18.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.3W;38.5W
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.71nF

Technical details

P-Channel 60V 18.3A 2.3W 38.5W Surface Mount TO-252

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