VISHAY · FETs & Power MOSFETs · MPN SUD19N20-90-T4-E3
No reviews yet — be the first to review VISHAY SUD19N20-90-T4-E3.
| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 51nC@10V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3W;136W |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
200V 19A 4V 90mΩ@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS