VISHAY SUD19N20-90-E3

VISHAY · FETs & Power MOSFETs · MPN SUD19N20-90-E3

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)105mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 200V 19A 136W Surface Mount TO-252(DPAK)

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