VISHAY · FETs & Power MOSFETs · MPN SUD19N20-90-BE3
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| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 105mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
200V 19A 4V 136W 105mΩ@6V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS