VISHAY · FETs & Power MOSFETs · MPN SUD09P10-195-BE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 8.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.5W;32.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 34.8pF |
| RDS(on) | 195mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.055nF |
100V 8.8A 2.5V 195mΩ@10V 1 P-Channel TO-252AA Single FETs, MOSFETs RoHS