VISHAY · FETs & Power MOSFETs · MPN SQW61N65EF-GE3
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 229nC@10V |
| Output Capacitance(Coss) | 310pF |
| Current - Continuous Drain(Id) | 62A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 625W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 52mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.379nF |
650V 62A 4V 625W 52mΩ@10V 1 N-channel N-Channel TO-247AD Single FETs, MOSFETs RoHS