VISHAY SQW44N65EF-GE3

VISHAY · FETs & Power MOSFETs · MPN SQW44N65EF-GE3

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)177nC@10V
Output Capacitance(Coss)227pF
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)73mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.858nF
TypeN-Channel

Technical details

650V 47A 4V 500W 73mΩ@10V 1 N-channel N-Channel TO-247AD Single FETs, MOSFETs RoHS

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