VISHAY · FETs & Power MOSFETs · MPN SQW33N65EF-GE3
No reviews yet — be the first to review VISHAY SQW33N65EF-GE3.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 115nC@10V |
| Output Capacitance(Coss) | 163pF |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 109mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.972nF |
| Type | N-Channel |
650V 34A 4V 375W 109mΩ@10V 1 N-channel N-Channel TO-247AD Single FETs, MOSFETs RoHS