VISHAY SQUN702E-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQUN702E-T1_GE3

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)30A
RDS(on)60mΩ@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage200V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)154pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.474nF
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃

Technical details

N-Channel+P-Channel Array 200V 30A Surface Mount SMD

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