VISHAY · FETs & Power MOSFETs · MPN SQUN700E-T1_GE3
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 30A |
| Pd - Power Dissipation | 50W |
| RDS(on) | 75mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Drain to Source Voltage | 200V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 154pF |
| Number | - |
| Input Capacitance(Ciss) | 1.474nF |
| Gate Charge(Qg) | 30.2nC@10V |
| Operating Temperature | -55℃~+175℃ |
30A 50W 75mΩ@10V 3.5V FET, MOSFET Arrays RoHS