VISHAY · FETs & Power MOSFETs · MPN SQSA82CENW-T1_GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 9.6nC@10V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 27W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 46mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
80V 16A 2V 27W 46mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS