VISHAY · FETs & Power MOSFETs · MPN SQS944ENW-T1_GE3
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| Current - Continuous Drain(Id) | 9A |
|---|---|
| RDS(on) | 34mΩ@4.5V |
| Pd - Power Dissipation | 27.8W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 615pF |
| Gate Charge(Qg) | 11.5nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 415pF |
9A 34mΩ@4.5V 27.8W 2.5V 2 N-Channel FET, MOSFET Arrays RoHS