VISHAY · FETs & Power MOSFETs · MPN SQS850EN-T1_GE3
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 132pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 21.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.021nF |
| Type | N-Channel |
N-Channel 60V 12A 33W Surface Mount PowerPAK1212-8