VISHAY · FETs & Power MOSFETs · MPN SQS850EN-T1_BE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 41nC@10V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 21.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.021nF |
60V 12A 2V 21.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS