VISHAY · FETs & Power MOSFETs · MPN SQS660CENW-T1_GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Output Capacitance(Coss) | 800pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 11.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
| Type | N-Channel |
60V 18A 2.5V 62.5W 11.2mΩ@10V 1 N-channel N-Channel PowerPAK1212-8W Single FETs, MOSFETs RoHS