VISHAY · FETs & Power MOSFETs · MPN SQS484CENW-T1_GE3
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| Gate Charge(Qg) | 68nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.35nF |
| Type | N-Channel |
40V 16A 2.5V 20W 11mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8W Single FETs, MOSFETs RoHS