VISHAY SQS482ENW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQS482ENW-T1_GE3

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.492nF

Technical details

N-Channel 30V 16A 20W Surface Mount PowerPAK1212-8

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