VISHAY · FETs & Power MOSFETs · MPN SQS481ENW-T1_GE3
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 18pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 1.095Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 385pF |
| Type | P-Channel |
P-Channel 150V 4.7A 62.5W Surface Mount PowerPAK1212-8