VISHAY SQS460CENW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQS460CENW-T1_GE3

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)290pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation27W
RDS(on)41mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)20pF
Input Capacitance(Ciss)580pF
TypeN-Channel

Technical details

60V 8A 2.5V 27W 41mΩ@4.5V N-Channel PowerPAK1212-8W Single FETs, MOSFETs RoHS

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