VISHAY SQS420EN-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQS420EN-T1_GE3

No reviews yet — be the first to review VISHAY SQS420EN-T1_GE3.

Specifications

Gate Charge(Qg)14nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)28mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)490pF
TypeN-Channel

Technical details

N-Channel 20V 8A 18W Surface Mount PowerPAK1212-8

Related FETs & Power MOSFETs