VISHAY · FETs & Power MOSFETs · MPN SQS411ENW-T1_GE3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 39.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 187pF |
| RDS(on) | 38mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.191nF |
| Type | P-Channel |
P-Channel 40V 16A 39.5W Surface Mount PowerPAK1212-8W