VISHAY · FETs & Power MOSFETs · MPN SQS407ENW-T1_GE3
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| Gate Charge(Qg) | 77nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 465pF |
| RDS(on) | 10.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.572nF |
30V 16A 20W 10.8mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS