VISHAY SQS405CENW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQS405CENW-T1_GE3

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)81nC@8V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation13W
Reverse Transfer Capacitance (Crss@Vds)850pF
RDS(on)22mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)3.05nF
TypeP-Channel

Technical details

12V 16A 1V 13W 22mΩ@2.5V 1 P-Channel P-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

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