VISHAY · FETs & Power MOSFETs · MPN SQS201CENW-T1_GE3
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| Output Capacitance(Coss) | 421pF |
|---|---|
| Pd - Power Dissipation | 62.5W |
| Configuration | - |
| Gate Charge(Qg) | 17.4nC |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 80mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 949pF |
62.5W 100V 2V 80mΩ@10V 1 P-Channel P-Channel Single FETs, MOSFETs RoHS