VISHAY · FETs & Power MOSFETs · MPN SQS181ELNW-T1_GE3
No reviews yet — be the first to review VISHAY SQS181ELNW-T1_GE3.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 44A |
| Output Capacitance(Coss) | 1.193nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 119W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 48mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.771nF |
| Type | P-Channel |
P-Channel 80V 44A 119W Surface Mount PowerPAK1212-8SLW