VISHAY · FETs & Power MOSFETs · MPN SQS180ENW-T1_GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Output Capacitance(Coss) | 521pF |
| Current - Continuous Drain(Id) | 72A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 119W |
| RDS(on) | 8.67mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.092nF |
| Type | N-Channel |
80V 72A 3.5V 119W 8.67mΩ@10V 1 N-channel N-Channel PowerPAK1212-8SLW Single FETs, MOSFETs RoHS