VISHAY SQS174ELNW-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SQS174ELNW-T1-GE3

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Specifications

Drain to Source Voltage72V
Gate Charge(Qg)46nC@10V
Output Capacitance(Coss)502pF
Current - Continuous Drain(Id)87A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation103W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.623nF
TypeN-Channel

Technical details

72V 87A 1.2V 103W 3.8mΩ@10V 1 N-channel N-Channel PowerPAK1212-8 Single FETs, MOSFETs RoHS

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