VISHAY · FETs & Power MOSFETs · MPN SQS160ELNW-T1_GE3
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| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 141A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 197W |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.866nF |
60V 141A 2.5V 197W 1 N-channel Single FETs, MOSFETs RoHS