VISHAY · FETs & Power MOSFETs · MPN SQS142ENW-T1_GE3
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 113W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.952nF |
40V 110A 3.3V 113W 4.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS