VISHAY SQS141ELNW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQS141ELNW-T1_GE3

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Specifications

Gate Charge(Qg)141nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)347pF
Current - Continuous Drain(Id)79A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation119W
Reverse Transfer Capacitance (Crss@Vds)460pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.458nF
TypeP-Channel

Technical details

P-Channel 40V 79A 119W Surface Mount PowerPAK1212-8SLW

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