VISHAY SQS140ENW-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQS140ENW-T1_GE3

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.295nF
Current - Continuous Drain(Id)152A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation119W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)2.53mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.111nF
TypeN-Channel

Technical details

40V 152A 3.5V 119W 2.53mΩ@10V 1 N-channel N-Channel PowerPAK1212-8SLW Single FETs, MOSFETs RoHS

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