VISHAY · FETs & Power MOSFETs · MPN SQR70090ELR_GE3
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| Gate Charge(Qg) | 65nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 86A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 10.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.5nF |
| Type | N-Channel |
100V 86A 2.5V 136W 10.6mΩ@4.5V 1 N-channel N-Channel DPAK(TO-252) Single FETs, MOSFETs RoHS