VISHAY SQM90142E_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM90142E_GE3

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Specifications

Gate Charge(Qg)85nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)1.75nF
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)15.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF
TypeN-Channel

Technical details

N-Channel 200V 95A 375W Surface Mount TO-263(D2Pak)

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