VISHAY SQM70060EL_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM70060EL_GE3

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.5nF

Technical details

N-Channel 100V 75A 55W Surface Mount TO-263(D2Pak)

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