VISHAY · FETs & Power MOSFETs · MPN SQM50P04-09L_GE3
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| Gate Charge(Qg) | 145nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2nF |
| RDS(on) | 9.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.045nF |
40V 50A 2V 150W 9.4mΩ@10V 1 P-Channel TO-263(D2PAk) Single FETs, MOSFETs RoHS